UCSB HDI Tests (H1-01, H1-04, H1-25)


Preliminary comments


Noise

100 ns Shaping time
  • Average noise ranges from about 460 to 490 electrons.
  • Noise is worse for higer CAL DAC values.


400 ns Shaping time
  • Average noise about 305 electrons.
  • Noise does not depend on CAL DAC value.

Gain

  • Average gain: 208 mV/fC.
  • Average offset dispersion: 1.3 threshold counts or 13.6 mV.

Current

Power Consumption:
  • 0.57 W per chip.
  • 4.5 mW per channel.

Problems

H1-01:

  • Clock B- trace for chip address 2 on the p-side was broken.
  • Sent back to Italy.


H1-04:

  • Can't read p-side from the right. Bad tail connection somwhere?


H1-25:

  • Arrived with 9 Ohm short between A0 and A5 on the p-side.
  • A0-A5 resistance increased after power up to 250 Ohms.
  • Can't read n-side or p-side from the right. Bad tail connection somwhere?


ALL:

  • The "Chip 9" problem is back, only not with chip 9.
  • Coherent bursts of noise.
  • Still only on p-side.
  • Not seen in Italy.
  • Source remains unknown.
Noise vs channel



Normal channel (left) and noisy channel (right) for H1-01.

Postscript Links

  • All of the tables in this page.
H1-01
H1-04
H1-25


owen@electron.physics.ucsb.edu